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Showing 10 out of a total of 17 results. (0.072 seconds)
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(Institute of Physics Publishing, 2005-01-07)
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(Institute of Physics Publishing, 2006-06-07)
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Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer (Institute of Physics Publishing, 2007-09-07)
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(Institute of Physics Publishing, 2007-03-07)
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(Institute of Physics Publishing, 2007-02-21)
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(Institute of Physics Publishing, 2007-05-07)
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(Institute of Physics Publishing, 2009-04-21)
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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers (Institute of Physics Publishing, 2009-12-07)
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(Institute of Physics Publishing, 2011-08-10)