Издательство Taylor&Francis по названию
Отображаемые элементы 219093-219112 из 558821
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(Gordon and Breach Science Publishers Ltd., 1989-01-01)
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(Marcel Dekker, Inc., 1994-01-01)All proper rational actions of the additive group on complex affine three space admit equivariant trivializations with quotient isomorphic to complex two space. An example of an additive group action on complex seven space ...
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(Marcel Dekker, Inc., 1994-01-01)Rational actions of the additive group of complex numbers on complex n space are considered. A ring theoretic criterion for properness is given, along with ideal theoretic criteria for local triviality of such actions. The ...
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(Taylor & Francis Group, 1991-01-01)Lumped-element second-order active filters are presented which can either be tuned to an all-pass response and then especially used in 90° phase shifters, or tuned to a bandstop response. Their structures have been chosen ...
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(Taylor & Francis Group, 1992-05-01)Low-temperature photoluminescence measurements under hydrostatic pressure were performed on [100]-, [311]-and [111]-grown GaAs/AlAs superlattices. The indirect optical transitions for all three growth directions were ...
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(Taylor & Francis Group, 1990-07-01)GaAs/GaAlAs traveling wave type laser amplifiers with different tilted angle facets are defined by proton bombardment. Some characters are measured. Maximum single-pass gains of 27.8 dB are reached with an optical fiber ...
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(Taylor & Francis Group, 1991-02-01)This paper presents bandpass and bandstop second-order RC active filters integrated on GaAs and operating above 1 GHz. In particular, high-selectivity bandpass filters have been investigated and two structures are proposed. ...
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(Taylor & Francis Group, 1989-03-01)This paper describes a generalized circuit model for GaAs MESFETs. The novel features of the model include continuous descriptions for the intrinsic FET, Schottky diode and inter-electrode capacitance, valid both above and ...
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(Taylor & Francis Group, 1984-11-01)An analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for a linear lateral doping profile are given as a special case. Theoretical considerations predict that better device ...
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(Taylor & Francis Group, 1995-02-01)GaAs microwave monolithic integrated circuits (MMICs) with Ba1−XSrXTiO3 (BST) capacitors have been developed. Spin-coating of sol-gel solution was used to make the BST thin film. The obtained BST film has a dielectric ...
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(Taylor & Francis Group, 1975-11-01)
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(Taylor & Francis Group, 1986-06-01)A study is presented on native air-exposed GaAs' surface composition and the sputter-cleaning transient. These results are based on both XPS and ISS.
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(Taylor & Francis Group, 1987-01-01)The interaction between drifting carriers near the surface of GaAs and a slow TM wave is studied under the two sets of boundary conditions. A transverse static magnetic field is included, and a continuous wave amplifier ...
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(Taylor & Francis Group, 1985-04-01)This paper reviews the theoretical analysis and experimental results on a GaAs travelling-wave amplifier. The amplification is based on the growing space-charge waves resulting from the negative differential mobility of ...
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(Taylor & Francis Group, 1886-04-01)
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(Taylor & Francis Group, 1886-03-04)
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(Taylor & Francis Group, 1885-12-04)
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(Taylor & Francis Group, 1965-01-01)The presence of ophiolites among the gabbro-pegmatites of the Armenian S.S.R. has been noted by the author. The geological position, structure, composition, origin, and textural properties imposed by emplacement processes ...
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(Taylor & Francis Group, 1991-07-01)
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(Taylor & Francis Group, 1996-03-01)A comparison between Gabor X-ray holography and lensless Fourier transform X-ray holography is made. Three aspects are considered: recording distance, aberrations in optical reconstructions and digital reconstructions of ...
Отображаемые элементы 219093-219112 из 558821