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Издательство Taylor&Francis по журналам "Integrated Ferroelectrics"

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  • Xu W-Ping; Zheng Lirong; Lin Chenglu; Okuyama Masanori (Taylor & Francis Group, 1996-10-01)
    Barium titanate (BaTiO3) thin films with high (111)-orientation were successfully grown on TiO2-covered Si(111) substrate using hydrothermal method, where the TiO2 layer was previously fabricated at room temperature by ...
  • Sumi Tatsumi; Moriwaki Nobuyuki; Nakane George; Nakakuma Tetsuji; Judai Yuji; Uemoto Yasuhiro; Nagano Yoshihisa; Hayashi Shinichiro; Azuma Masamichi; Otsuki Tatsuo; Kano Gota; Cuchiaro JosephD.; Scott MichaflC.; McMillan LarryD.; Paz de Araujo CarlosA. (Taylor & Francis Group, 1995-01-01)
    A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum ...
  • Chang Horng-Yi; Lin Yen-Yi; Liu Kuo-Shung; Hu Chen-Ti; Lin Tsai-Fa; Lin I-Nan (Taylor & Francis Group, 1996-11-01)
    (Ba0.7Pb0.3)TiO3 and (Ba0.4Pb0.6)TiO3 materials possessing double critical temperature (Tc) and single high-Tc in resistivity-temperature (ρ-T) behavior, respectively, were obtained by microwave sintering at 1050°C for 5 ...
  • Outzourhit Abdelkader; Naziripour Ali; Trefny JohnU.; Kito Tomoko; Yarar Baki; Yandrofski Robert; Cuchiaro J.D.; Hermann AllenM. (Taylor & Francis Group, 1995-08-01)
    Ba1−xSrxTiO3 thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown ...
  • Wu S.Y.; Tran B.N.; Davis F.Y.; Trent C.L.; Edberg D.L.; Geideman W.A. (Taylor & Francis Group, 1994-05-01)
    Smart materials of lead-zirconate-titanate (PZT) piezoelectric ceramics have attracted attention in recent years for active vibration control, acoustic noise suppression, health monitoring and damage assessment. We at ...
  • Kim Kwang-Ho; Ishiwara Hiroshi (Taylor & Francis Group, 1994-10-01)
    Adaptive-learning neuron circuits are reviewed, in which a pulse frequency modulation (PFM) system is used and the interval of output pulses is changed through the learning process. Key devices of the circuits are MFSFETs ...
  • Deys S.K.; Barlingay C.K.; Lee J.J.; Gloerstad T.K.; Suchicital. C. T.A. (Taylor & Francis Group, 1992-07-01)
    Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt/Ti/Si3N4/Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were ...
  • Lesaicherre Pierre-Yves; Yamamichi Shintaro; Takemura Koichi; Yamaguchi Hiromu; Tokashiki Ken; Miyasaka Yoichi; Yoshida Masaji; Ono Haruhiko (Taylor & Francis Group, 1995-11-01)
    The capacitor requirements for Gbit-scale DRAMs are discussed in detail. The choice of SrTiO3 thin films over a stacked RuO2/TiN structure for the 1 Gbit DRAM is explained, and particular emphasis is put on the necessity ...
  • Dunn DouglasE.; de Araujo CarlosA. Paz (Taylor & Francis Group, 1993-04-01)
    A generalized ferroelectric capacitor modeling methodology is presented from a theoretical basis through implementation in PSPICE. The approach postulates nonspecific sources of mobile charge as the source of nonideal ...
  • Arlt G.; Robels U. (Taylor & Francis Group, 1993-12-01)
    The aging of dielectric, elastic and piezoelectric properties is caused by a reduction of the 90° domain wall mobility. Defect dipoles in the domains orient slowly in energetically preferred directions. The oriented defects ...
  • Azuma M.; Nasu T.; Katsu S.; Otsuki T.; Kano G. (Taylor & Francis Group, 1992-11-01)
    A high-capacitance Pb (Zrx, Ti1-x)O3 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction ...
  • Scott J.F.; Galt David; Price JohnC.; Beall JamesA.; Ono RonaldH.; Paz de Araujo CarlosA.; McMillan L.D. (Taylor & Francis Group, 1995-01-01)
    The use of high-dielectric films for microwave devices, especially phased-array radar systems, in the tens of GHz regime requires very low-loss (0.01 to 0.1) films. Unfortunately most ferroelectrics have losses that diverge ...
  • Dennis John (Taylor & Francis Group, 1993-04-01)
    This paper examines two models proposed by Ishibashi and Fatuzzo in an attempt to relate the switching kinetics they predict. It was found that there does not exist a simple relation between the three adjustible parameters ...
  • Lin Chhiu-Tsu; Li Li; Webb JeffreyS.; Lipeles RussellA.; Leung MartinS. (Taylor & Francis Group, 1993-12-01)
    The Deposition by Aqueous Acetate Solution (DAAS) technique has been developed for the preparation of thin films of Pb(Zr0.53Ti0.47)O3[PZT(53,47)] perovskites. This process, which employs titanium acetate, tends to establish ...
  • Li KewenK.; Haertling GeneH.; Howng Wei-Yean (Taylor & Francis Group, 1993-04-01)
    A computer-controlled dip coating apparatus has been designed and constructed for fabricating dielectric films from precursor solutions. This automated mechanism provided a totally hands-off process by which films of good ...
  • Lee S.C.; Teowee G.; Schrimpf R.D.; Birnie D.P.; Uhlmann D.R.; Galloway K.F. (Taylor & Francis Group, 1994-02-01)
    A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching ...
  • Yanovskaya M.I.; Solov'Eva L.I.; Kovsman E.P.; Obvintseva I.E.; Vorotilov K.A.; Turova N.Ya. (Taylor & Francis Group, 1994-05-01)
    Electrochemically prepared methoxyethoxide solutions have been suggested as precursors for sol-gel technology. Methoxyethoxides demonstrate higher stability in organic solvents than alkoxides; chelating properties of the ...
  • Melnick B.M.; Scott M.C.; De Araujo C.A. Paz; McMillan L.D.; Mihara T. (Taylor & Francis Group, 1993-12-01)
    Doping lead zirconate titanate (PZT) has often been examined in order to investigate changes in the electrical behavior of thin film ferroelectric capacitors.1 In this study, PZT has been doped with Hf, Nb, and Zn. After ...
  • Abt Norman; Moazzami Reza; Nissan-Cohen Yoav (Taylor & Francis Group, 1992-11-01)
    An apparent remanent signal seen by the application of voltage pulses to a Sawyer-Tower circuit is described. This 'remanent' is present for two pulses in the same direction when no remanent is expected. Variation of this ...
  • Thakoor Sarita; Perry J.; Maserjian J. (Taylor & Francis Group, 1994-06-01)
    An optical probing of sol-gel derived polycrystalline thin films of lead zirconate titanate (PZT), sandwiched between two metal electrodes to form a memory capacitor, is described. In principle, both electronic as well as ...