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Издательство Taylor&Francis по журналам "Integrated Ferroelectrics"

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  • (111)-Oriented BaTiO3 thin films hydrothermally formed on TiO2/Si substrate
    Xu W-Ping; Zheng Lirong; Lin Chenglu; Okuyama Masanori (Taylor & Francis Group, 1996-10-01)
    Barium titanate (BaTiO3) thin films with high (111)-orientation were successfully grown on TiO2-covered Si(111) substrate using hydrothermal method, where the TiO2 layer was previously fabricated at room temperature by ...
  • 256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V
    Sumi Tatsumi; Moriwaki Nobuyuki; Nakane George; Nakakuma Tetsuji; Judai Yuji; Uemoto Yasuhiro; Nagano Yoshihisa; Hayashi Shinichiro; Azuma Masamichi; Otsuki Tatsuo; Kano Gota; Cuchiaro JosephD.; Scott MichaflC.; McMillan LarryD.; Paz de Araujo CarlosA. (Taylor & Francis Group, 1995-01-01)
    A 3V 100ns read/write 256kb ferroelectric nonvolatile memory (FeRAM) is achieved with 1T/1C cells, novel reference cell circuits and cell plate circuits. The FeRAM is fabricated in 1.2um CMOS process with single Aluminum ...
  • Abnormal resistivity-temperature characteristics of semiconducting (Ba1-xPbx)TiO3 materials prepared by microwave sintering
    Chang Horng-Yi; Lin Yen-Yi; Liu Kuo-Shung; Hu Chen-Ti; Lin Tsai-Fa; Lin I-Nan (Taylor & Francis Group, 1996-11-01)
    (Ba0.7Pb0.3)TiO3 and (Ba0.4Pb0.6)TiO3 materials possessing double critical temperature (Tc) and single high-Tc in resistivity-temperature (ρ-T) behavior, respectively, were obtained by microwave sintering at 1050°C for 5 ...
  • A comparative study of tunable Ba1−xSrxTiO3 thin film capacitors prepared by rf-sputtering and liquid-phase deposition
    Outzourhit Abdelkader; Naziripour Ali; Trefny JohnU.; Kito Tomoko; Yarar Baki; Yandrofski Robert; Cuchiaro J.D.; Hermann AllenM. (Taylor & Francis Group, 1995-08-01)
    Ba1−xSrxTiO3 thin film capacitors have been successfully prepared using rf-sputtering and a metal organic deposition (MOD) method. The structure, microstructure and composition of the BSTO films are presented. Films grown ...
  • Active beam vibration control using PZT actuators
    Wu S.Y.; Tran B.N.; Davis F.Y.; Trent C.L.; Edberg D.L.; Geideman W.A. (Taylor & Francis Group, 1994-05-01)
    Smart materials of lead-zirconate-titanate (PZT) piezoelectric ceramics have attracted attention in recent years for active vibration control, acoustic noise suppression, health monitoring and damage assessment. We at ...
  • Adaptive-learning neuron circuits using ferroelectric thin films
    Kim Kwang-Ho; Ishiwara Hiroshi (Taylor & Francis Group, 1994-10-01)
    Adaptive-learning neuron circuits are reviewed, in which a pulse frequency modulation (PFM) system is used and the interval of output pulses is changed through the learning process. Key devices of the circuits are MFSFETs ...
  • Advances in processing and properties of perovskite thin-films for FRAMs, DRAMs, and decoupling capacitors
    Deys S.K.; Barlingay C.K.; Lee J.J.; Gloerstad T.K.; Suchicital. C. T.A. (Taylor & Francis Group, 1992-07-01)
    Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt/Ti/Si3N4/Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were ...
  • A gbit-scale dram stacked capacitor with ECR MOCVD SrTiO3 over RIE patterned RuO2/TiN storage nodes
    Lesaicherre Pierre-Yves; Yamamichi Shintaro; Takemura Koichi; Yamaguchi Hiromu; Tokashiki Ken; Miyasaka Yoichi; Yoshida Masaji; Ono Haruhiko (Taylor & Francis Group, 1995-11-01)
    The capacitor requirements for Gbit-scale DRAMs are discussed in detail. The choice of SrTiO3 thin films over a stacked RuO2/TiN structure for the 1 Gbit DRAM is explained, and particular emphasis is put on the necessity ...
  • A Generalized ferroelectric capacitor modeling methodology
    Dunn DouglasE.; de Araujo CarlosA. Paz (Taylor & Francis Group, 1993-04-01)
    A generalized ferroelectric capacitor modeling methodology is presented from a theoretical basis through implementation in PSPICE. The approach postulates nonspecific sources of mobile charge as the source of nonideal ...
  • Aging and fatigue in bulk ferroelectric perovskite ceramics
    Arlt G.; Robels U. (Taylor & Francis Group, 1993-12-01)
    The aging of dielectric, elastic and piezoelectric properties is caused by a reduction of the 90° domain wall mobility. Defect dipoles in the domains orient slowly in energetically preferred directions. The oriented defects ...
  • A high-capacitance PZT-on-Ta2O5 memory cell with a chemically stable electrode suitable for sub-micron processing
    Azuma M.; Nasu T.; Katsu S.; Otsuki T.; Kano G. (Taylor & Francis Group, 1992-11-01)
    A high-capacitance Pb (Zrx, Ti1-x)O3 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction ...
  • A model of voltage-dependent dielectric losses for ferroelectric MMIC devices
    Scott J.F.; Galt David; Price JohnC.; Beall JamesA.; Ono RonaldH.; Paz de Araujo CarlosA.; McMillan L.D. (Taylor & Francis Group, 1995-01-01)
    The use of high-dielectric films for microwave devices, especially phased-array radar systems, in the tens of GHz regime requires very low-loss (0.01 to 0.1) films. Unfortunately most ferroelectrics have losses that diverge ...
  • An analysis of two models of switching kinetics in thin-films
    Dennis John (Taylor & Francis Group, 1993-04-01)
    This paper examines two models proposed by Ishibashi and Fatuzzo in an attempt to relate the switching kinetics they predict. It was found that there does not exist a simple relation between the three adjustible parameters ...
  • An aqueous, low temperature process for synthesizing PZT(53,47) thin films
    Lin Chhiu-Tsu; Li Li; Webb JeffreyS.; Lipeles RussellA.; Leung MartinS. (Taylor & Francis Group, 1993-12-01)
    The Deposition by Aqueous Acetate Solution (DAAS) technique has been developed for the preparation of thin films of Pb(Zr0.53Ti0.47)O3[PZT(53,47)] perovskites. This process, which employs titanium acetate, tends to establish ...
  • An automatic dip coating process for dielectric thin and thick films
    Li KewenK.; Haertling GeneH.; Howng Wei-Yean (Taylor & Francis Group, 1993-04-01)
    A computer-controlled dip coating apparatus has been designed and constructed for fabricating dielectric films from precursor solutions. This automated mechanism provided a totally hands-off process by which films of good ...
  • An I-V measurement method and its application for characterizing ferroelectric PZT thin films
    Lee S.C.; Teowee G.; Schrimpf R.D.; Birnie D.P.; Uhlmann D.R.; Galloway K.F. (Taylor & Francis Group, 1994-02-01)
    A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching ...
  • Anodic dissolution of metals in methoxyethanol—a way to new precursors for sol-gel technology
    Yanovskaya M.I.; Solov'Eva L.I.; Kovsman E.P.; Obvintseva I.E.; Vorotilov K.A.; Turova N.Ya. (Taylor & Francis Group, 1994-05-01)
    Electrochemically prepared methoxyethoxide solutions have been suggested as precursors for sol-gel technology. Methoxyethoxides demonstrate higher stability in organic solvents than alkoxides; chelating properties of the ...
  • Anomalous fatigue behavior in Zn doped PZT
    Melnick B.M.; Scott M.C.; De Araujo C.A. Paz; McMillan L.D.; Mihara T. (Taylor & Francis Group, 1993-12-01)
    Doping lead zirconate titanate (PZT) has often been examined in order to investigate changes in the electrical behavior of thin film ferroelectric capacitors.1 In this study, PZT has been doped with Hf, Nb, and Zn. After ...
  • Anomalous remanent polarization in ferroelectric capacitors
    Abt Norman; Moazzami Reza; Nissan-Cohen Yoav (Taylor & Francis Group, 1992-11-01)
    An apparent remanent signal seen by the application of voltage pulses to a Sawyer-Tower circuit is described. This 'remanent' is present for two pulses in the same direction when no remanent is expected. Variation of this ...
  • An optical probe for ferroelectric thin film memory capacitors
    Thakoor Sarita; Perry J.; Maserjian J. (Taylor & Francis Group, 1994-06-01)
    An optical probing of sol-gel derived polycrystalline thin films of lead zirconate titanate (PZT), sandwiched between two metal electrodes to form a memory capacitor, is described. In principle, both electronic as well as ...