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Автор Huan, Jiao
Автор Zhou, Wancheng
Автор Fa, Luo
Дата выпуска 2002
dc.description Nano Si/C/N powders with different configurations were prepared by Chemical Vapor Deposition (CVD). The crystallinity of the products increased with increasing reaction temperature. The powder prepared at 1200 °C consisted of amorphous spherical particles with a particle size of 20 to 50 nm. The nanocrystalline particles produced at 1400 °C, with a mean size from 50 to 100 nm, were also spherical. The powder prepared at 1600 °C consisted of whiskers with a diameter from 20 to 50 nm, and the length ranged from 100 to 200 µm. XRD results indicated the whisker sample was mainly β-SiC, which was in good agreement with the SAED pattern. The permittivity of the powders was measured in the frequency range from 8.2 GHz to 12.4 GHz and loss tangents were calculated also. The permittivity and loss tangent of the amorphous Si/C/N nano powder were the lowest of the three samples studied. The ε⠲, ε⠳ and tanδ of the Si/C/N powders all decreased with increasing frequency. Impurity conduction, charged defects, quasi-free electrons, and Ï -bonds caused by nitrogen dissolved in the SiC lattice were the reasons for the dielectric loss of the Si/C/N powders.
Формат application.pdf
Издатель Royal Society of Chemistry
Название Synthesis and dielectric properties of nano Si/C/N powders
Тип research-article
DOI 10.1039/b111694k
Electronic ISSN 1364-5501
Print ISSN 0959-9428
Журнал Journal of Materials Chemistry
Том 12
Первая страница 2459
Последняя страница 2462
Аффилиация HuanCurrent address: Institute of Inorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China. E-mail: jhyty@ccermail.net; Tel.: +86-10-62754188. Jiao; Northwestern Polytechnical University, State Key Laboratory of Solidification Processing
Аффилиация Zhou Wancheng; Northwestern Polytechnical University, State Key Laboratory of Solidification Processing
Аффилиация Fa Luo; Northwestern Polytechnical University, State Key Laboratory of Solidification Processing
Выпуск 8
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