The Institute of Physics ( IOP ) по журналам "Semiconductor Science and Technology"
Отображаемые элементы 1-20 из 4047
-
(2000-11-01)A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the ...
-
(2000-06-01)Annealing of InGaAs quantum dots (QDs) fabricated by metal-organic chemical vapour deposition and covered with a very thin GaAs cap layer completely eliminates large dislocated InGaAs clusters and remarkably improves the ...
-
(1988-09-01)Measurements have been made of the 1/f noise in MOS enhancement and depletion devices in strong inversion, biased in the Ohmic region between 77 and 360 K. Measurements of the DC characteristics have enabled the results ...
-
(1989-02-01)The 1/f noise in power VMOS transistors has been measured. In the ohmic device channel the number fluctuation is comparable with that in other MOS devices but is more variable with gate voltage. In saturation, the noise ...
-
(1994-01-01)The inversion channel of metal-insulator (Al2O3) semiconductor (p-Hg1-xCdxTe) field effect transistors was investigated by the Shubnikov-de Haas (SdH) effect as well as by classical magnetoresistance measurements. Observation ...
-
(1998-08-01)We present simulation results for the activation barrier and the number of electrons N in a quantum dot structure that are obtained from the self-consistent solution of the 3D Schrödinger-Poisson problem. We observe an ...
-
(1995-08-01)Arsenic-rich InAs/lnAs1-xSbx strained layer superlattices (SLSs) grown on GaAs substrates by molecular beam epitaxy (MBE) are studied for their potential application as infrared emitters. The long-wavelength emission (4-11 ...
-
(2000-04-01)In this article, a semi-insulating polycrystalline silicon (SIPOS)-SiO2 compound sheet is used for the first time as a passivating layer of a 4H-SiC n+ pp+ structure. After the deposition of SIPOS by LPCVD, a unique ...
-
(1990-06-01)A 5*5 monolithic InGaAs-InP multiple quantum well two-dimensional spatial light modulator is reported for the first time. Silicon oxynitride passivation was employed to produce array pixels on a 400 mu m pitch. Spatially ...
-
(1993-08-01)A technique for fabricating back-gated high electron mobility transistors (HEMTS) with large low-temperature mobilities is reported. The device consists of a normal MBE-grown two-dimensional electron gas structure (2DEG), ...
-
(1997-07-01)Ballistic electron emission microscopy (BEEM) has been applied to determine the barrier height change of contacts in which the GaAs substrate was dry etched by using . The distribution of barrier heights over the contact ...
-
(1995-04-01)Ballistic electron emission microscopy (BEEM) has been applied, together with more classical methods such as current-voltage and capacitance-voltage measurements, to determine the barrier height change of Au/n-GaAs due to ...
-
(1999-09-01)The distribution of Schottky barrier heights over the contact area in Au/III-V semiconductor (GaAs, InP, AlxGa1-xAs, InxGa1-xAs) diodes was determined using ballistic electron emission microscopy. Samples which received a ...
-
(1997-03-01)We present a theoretical model for calculating the band structures of strained quantum-well wurtzite semiconductors. The theory is based on the Hamiltonian for wurtzite semiconductors and includes the strain effects on the ...
-
(2000-04-01)The spatial distributions of the Schottky barrier heights of ultrathin CoSi2 films (~10 nm) on n-Si(100), obtained by multilayer solid state reaction of Co/Ti/n-Si, Co/a-Si/Ti/n-Si, Ti/Co/a-Si/Ti/n-Si and Co/n-Si systems, ...
-
(1989-06-01)Computer simulation of the (400) X-ray double crystal diffraction rocking curves is presented for a superlattice structure. The model used is a combination of the Takagi-Taupin method and Abeles matrix method for the ...
-
(1992-12-01)The authors present an ab initio pseudopotential calculation within the local density approximation to determine the electronic structure and the full set of elastic constants of AlP, which have not yet been directly ...
-
(1995-03-01)We use the density functional theory in the local density approximation and norm-conserving pseudopotentials to calculate the valence band offset (VBO) at a ZnSe/ZnTe interface grown in the (100) direction. The obtained ...
-
(1991-11-01)Ab initio local density functional cluster calculations are used to investigate the structure and dynamic properties of BAs in its various charge states in GaAs. The authors find B- - is an on-site defect with a triplet ...
-
(1990-03-01)Ab initio LDF calculations are carried out on 75 atom H-terminated clusters of Si containing 4 O atoms surrounding a Si, Al or B core. The clusters represent models of NL10 and NL8 thermal defects in Si. If the Si and O ...
Отображаемые элементы 1-20 из 4047