1.5m luminescence characteristic of erbium in B, P doped a-SiO:H filmsProject supported by the State Key Project of Basic Research and by the National Natural Science Foundation of China (Grant Nos. 69976028 and 69636040).
Liang Jian-jun; Chen Wei-de; Wang Yong-qian; Chang Yong; Wang Zhan-guo
Журнал:
Chinese Physics
Дата:
2000-10-01
Аннотация:
Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.
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