| Автор | Gu Bing-lin |
| Автор | Duan Wen-hui |
| Автор | Xiong Shi-ying |
| Дата выпуска | 1996-10-01 |
| dc.description | The dependence of optical interface phonon on structure was demonstrated for thin layer inserted GaAlAs quantum well structures. It was found that the dispersion is sensitive to the Al-content of the inserted layer but almost independent of the position of the layer. The results showed that phonon modes can be modulated by adjusting the well parameters, which is useful for some device applications. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Optical Interface Phonon in Thin Layer Inserted Quantum Well Structure |
| Тип | paper |
| DOI | 10.1088/0256-307X/13/10/015 |
| Electronic ISSN | 1741-3540 |
| Print ISSN | 0256-307X |
| Журнал | Chinese Physics Letters |
| Том | 13 |
| Первая страница | 768 |
| Последняя страница | 771 |
| Аффилиация | Gu Bing-lin; Department of Physics, Tsinghua University, Beijing 100084 |
| Аффилиация | Duan Wen-hui; Department of Physics, Tsinghua University, Beijing 100084 |
| Аффилиация | Xiong Shi-ying; Department of Physics, Tsinghua University, Beijing 100084 |
| Выпуск | 10 |
