Growth Kinetics of Vicinal Surfaces of <sup>4</sup>He Crystals
O. A. Andreeva; K. O. Keshishev; A. B. Kogan; A. N. Marchenkov; O. A. Andreeva; Kapitza Institute for Physical Problems, Russia's Academy of Sciences, Kosygina ul. 2, 117334 Moscow, Russia; K. O. Keshishev; Kapitza Institute for Physical Problems, Russia's Academy of Sciences, Kosygina ul. 2, 117334 Moscow, Russia; A. B. Kogan; Kapitza Institute for Physical Problems, Russia's Academy of Sciences, Kosygina ul. 2, 117334 Moscow, Russia; A. N. Marchenkov; Kapitza Institute for Physical Problems, Russia's Academy of Sciences, Kosygina ul. 2, 117334 Moscow, Russia
Журнал:
EPL (Europhysics Letters)
Дата:
1992-08-15
Аннотация:
The temperature dependence of the growth coefficient in the angular vicinity of the basal [0001] facet of hcp <sup>4</sup>He crystals has been measured in the temperature range from 0.35 K to 0.45 K. Contrary to theoretical predictions this dependence turned out to be much stronger for vicinal surfaces than for nonvicinal orientations. For vicinal surfaces experimental data can be approximated by both K ∝ T<sup>−5</sup> and K ∝ exp[ε/T] dependences, where ε = 1.9 K.
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