The differential resistance dV/dI vs. applied voltage V for URu₂Si₂–normal-metal point-contacts (PCs) is investigated. For some PCs a clear double-minimum structure is observed in dV/dI vs. V at zero bias well below the superconducting critical temperature T_c as expected for the Andreev reflection. The double minimum occurs only for PCs with suppressed antiferromagnetic (AF) features in dV/dI, in support of a recent model of the gap depression by AF order in the (a,b)-plane of tetragonal URu₂Si₂. A strong anisotropy of the reduced gap 2Δ/kT_c and of B_c2 for PCs along the a and the c axis is also observed.