| Автор | M. Wenderoth |
| Автор | M. A. Rosentreter |
| Автор | K. J. Engel |
| Автор | A. J. Heinrich |
| Автор | M. A. Schneider |
| Автор | R. G. Ulbrich |
| Дата выпуска | 1999-03-01 |
| dc.description | In situ cleaved (110) surfaces of n-doped GaAs have been investigated by scanning tunneling microscopy (STM) and spectroscopy (STS) at temperatures from 8 K to 300 K. At low temperatures oscillatory features in the topography around individual donor atoms embedded in the GaAs matrix and peaks in the differential conductivity (dI/dU) curves are seen. Both vanish with increasing temperature. The experimental results are described consistently in the framework of quantized subbands of a low-dimensional electron gas within the band-bending region which is induced by the STM tip. The quantization occurs at unpinned semiconductors surfaces and is also relevant for a quantitative understanding of STM data at room temperature. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 1999 EDP Sciences |
| Название | Low-temperature scanning tunneling spectroscopy as a probe for a confined electron gas |
| Тип | lett |
| DOI | 10.1209/epl/i1999-00206-0 |
| Electronic ISSN | 1286-4854 |
| Print ISSN | 0295-5075 |
| Журнал | EPL (Europhysics Letters) |
| Том | 45 |
| Первая страница | 579 |
| Последняя страница | 584 |
| Аффилиация | M. Wenderoth; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Аффилиация | M. A. Rosentreter; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Аффилиация | K. J. Engel; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Аффилиация | A. J. Heinrich; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Аффилиация | M. A. Schneider; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Аффилиация | R. G. Ulbrich; 4. Physikalisches Institut - Bunsenstraße 13, D-37073 Göttingen, Germany |
| Выпуск | 5 |
