| Автор | A. B. Filonov |
| Автор | D. B. Migas |
| Автор | V. L. Shaposhnikov |
| Автор | N. N. Dorozhkin |
| Автор | V. E. Borisenko |
| Автор | H. Lange |
| Автор | A. Heinrich |
| Дата выпуска | 1999-05-01 |
| dc.description | For the first time, theoretical arguments for the semiconducting properties of the ReSi<sub>1.75</sub> phase have been given by means of ab initio linear muffin-tin orbital method (LMTO) calculations. It is shown that the material is indeed a narrow-gap semiconductor with an indirect gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Копирайт | 1999 EDP Sciences |
| Название | Electronic properties of semiconducting rhenium silicide |
| Тип | lett |
| DOI | 10.1209/epl/i1999-00272-8 |
| Electronic ISSN | 1286-4854 |
| Print ISSN | 0295-5075 |
| Журнал | EPL (Europhysics Letters) |
| Том | 46 |
| Первая страница | 376 |
| Последняя страница | 381 |
| Выпуск | 3 |
