Employing van der Waals epitaxy we grow quasi-free 2-dimensional clusters of layered materials. The weak coupling between the layers enables the clusters to reveal their intrinsic properties undisturbed by the underlying substrate. Their orientations being well ordered allow k_∥-resolved measurements. Applying angle-resolved photoemission in combination with scanning tunneling microscopy to the same samples allows to study the evolution of the electronic structure with increasing cluster size. For 2D HfS₂ clusters grown on WSe₂ we demonstrate that k_∥ dispersion already occurs for cluster diameters of ≈ 100 nm.