A crystal surface which is miscut with respect to a high-symmetry plane exhibits steps with a characteristic distance. It is argued that the continuum description of growth on such a surface, when desorption can be neglected, is given by the anisotropic version of the conserved KPZ equation with non-conserved noise. A one-loop dynamical renormalization group calculation yields the values of the dynamical exponent and the roughness exponent which are shown to be the same as in the isotropic case. The results presented here should particularly apply to growth under conditions which are typical for molecular beam epitaxy.