Oscillator strengths for transitions among the 3s<sup>2</sup> and 3s3p levels of Si III
P C Ojha; F P Keenan; A Hibbert; P C Ojha; Dept. of Appl. Math. & Theor. Phys., Queen's Univ. of Belfast, UK; F P Keenan; Dept. of Appl. Math. & Theor. Phys., Queen's Univ. of Belfast, UK; A Hibbert; Dept. of Appl. Math. & Theor. Phys., Queen's Univ. of Belfast, UK
Журнал:
Journal of Physics B: Atomic, Molecular and Optical Physics
Дата:
1988-07-28
Аннотация:
Accurate oscillator strengths for electric-dipole-allowed intercombination transition (3s<sup>2</sup> <sup>1</sup>S<sub>0</sub> to 3s3p <sup>3</sup>P<sub>1</sub>) and other electric quadrupole, magnetic dipole and magnetic quadrupole transitions among the 3s<sup>2</sup> and 3s3p levels of Si III are reported.
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