| Автор | W Lang |
| Автор | R Leancu |
| Автор | U Schaber |
| Автор | G Wiedamann |
| Автор | H U Käufl |
| Дата выпуска | 1996-03-01 |
| dc.description | While silicon can be easily etched anisotropically using a KOH solution, the anisotropic etching of germanium is difficult to achieve. We describe experiments using different etchants and different masking layers. The best technological results are obtained using a solution of phosphoric acid and hydrogen peroxide . As a mask, a thin film of chromium is preferable. The slow-etching plane is the plane. At , the etch rate is . With this technology it is possible to fabricate V grooves and the other typical structures of anisotropic etching known from silicon technology. One possible application is the production of infrared optical devices in germanium. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Bulk micromachining of Ge for IR gratings |
| Тип | paper |
| DOI | 10.1088/0960-1317/6/1/008 |
| Electronic ISSN | 1361-6439 |
| Print ISSN | 0960-1317 |
| Журнал | Journal of Micromechanics and Microengineering |
| Том | 6 |
| Первая страница | 46 |
| Последняя страница | 48 |
| Выпуск | 1 |
