| Автор | Sheng Wei-dong |
| Автор | Xia Jian-bai |
| Дата выпуска | 1996-09-01 |
| dc.description | We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field |
| Тип | paper |
| DOI | 10.1088/1004-423X/5/9/008 |
| Print ISSN | 1004-423X |
| Журнал | Acta Physica Sinica (Overseas Edition) |
| Том | 5 |
| Первая страница | 700 |
| Последняя страница | 704 |
| Аффилиация | Sheng Wei-dong; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China |
| Аффилиация | Xia Jian-bai; State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China |
| Выпуск | 9 |
