| Автор | Yang Zhong-qin |
| Автор | Xu Zhi-zhong |
| Дата выпуска | 1997-08-01 |
| dc.description | The band structures of wurtzite GaN (α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-binding method in sp<sup>3</sup>s* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary part of dielectric function (ϵ<sub>2</sub> (ω)) are evaluated to be in the regions - 10.0 -12 eV and 0.0 - 10.0 eV, respectively. There are mainly three peaks at 6.4, 7.5, 8.4 eV, dominating the ϵ<sub>2</sub> (ω) spectrum. The two components of the ϵ<sub>2</sub> (ω) (i.e. ϵ<sub>2xy</sub> (ω)) and ϵ<sub>2x</sub> (ω)) are also calculated; and the real part of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Electronic and optical properties of wurtzite GaN: A theoretical approach |
| Тип | paper |
| DOI | 10.1088/1004-423X/6/8/005 |
| Print ISSN | 1004-423X |
| Журнал | Acta Physica Sinica (Overseas Edition) |
| Том | 6 |
| Первая страница | 597 |
| Последняя страница | 605 |
| Аффилиация | Yang Zhong-qin; State Key Laboratory of Applied Surface Physics; T. D. Lee Physics Laboratory, Fudan University, Shanghai 200433, China |
| Аффилиация | Xu Zhi-zhong; State Key Laboratory of Applied Surface Physics; T. D. Lee Physics Laboratory, Fudan University, Shanghai 200433, China |
| Выпуск | 8 |
