| Автор | Liu Qiu-xiang |
| Автор | Wang Jin-bin |
| Автор | Yang Guo-wei |
| Автор | You Jian-qiang |
| Дата выпуска | 1998-05-01 |
| dc.description | Based on a surface reaction mechanism for diamond deposition from the gas phase, a kinetic model is developed to describe diamond nucleation sites and the initial stage of diamond growth in chemical vapor deposition. The time-independent solutions to the rate equations, which describe the steady-state growth of diamond films, is obtained analytically for the case of small ratio of carbon flux to atomic hydrogen flux. The time-dependent solutions obtained by numerical methods for large ratio of carbon to atomic hydrogen flux describe the nucleation and initial gorwth stage of diamond films. This model suggests some general predictions for diamond nucleation and growth and can be used to explain several important experimental phenomena observed by others. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A kinetic model for the initial growth of diamond films |
| Тип | paper |
| DOI | 10.1088/1004-423X/7/5/009 |
| Print ISSN | 1004-423X |
| Журнал | Acta Physica Sinica (Overseas Edition) |
| Том | 7 |
| Первая страница | 379 |
| Последняя страница | 387 |
| Аффилиация | Liu Qiu-xiang; Department of Physics, Xiangtan University, Xiangtan 411105, China |
| Аффилиация | Wang Jin-bin; Department of Physics, Xiangtan University, Xiangtan 411105, China |
| Аффилиация | Yang Guo-wei; Department of Physics, Xiangtan University, Xiangtan 411105, China |
| Аффилиация | You Jian-qiang; Department of Physics, Xiangtan University, Xiangtan 411105, China |
| Выпуск | 5 |
