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Автор Li Yue-fa
Автор Liu Feng-qi
Автор Xu Bo
Автор Lin Feng
Автор Wu Jü
Автор Jiang Wei-hong
Автор Ding Ding
Автор Wang Zhan-guo
Дата выпуска 2000-03-01
dc.description The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate.
Формат application.pdf
Издатель Institute of Physics Publishing
Название InAs self-assembled nanostructures grown on InP(001)Project supported by the National Natural Science Foundation of China (Grant No. 69736010).
Тип paper
DOI 10.1088/1009-1963/9/3/012
Electronic ISSN 1741-4199
Print ISSN 1009-1963
Журнал Chinese Physics
Том 9
Первая страница 222
Последняя страница 224
Аффилиация Li Yue-fa; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Liu Feng-qi; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Xu Bo; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Lin Feng; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Wu Jü; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Jiang Wei-hong; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Ding Ding; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Аффилиация Wang Zhan-guo; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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