| Автор | Li Yue-fa | 
| Автор | Liu Feng-qi | 
| Автор | Xu Bo | 
| Автор | Lin Feng | 
| Автор | Wu Jü | 
| Автор | Jiang Wei-hong | 
| Автор | Ding Ding | 
| Автор | Wang Zhan-guo | 
| Дата выпуска | 2000-03-01 | 
| dc.description | The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures are characterized by atomic force microscopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view of the energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every other layer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAs substrate. | 
| Формат | application.pdf | 
| Издатель | Institute of Physics Publishing | 
| Название | InAs self-assembled nanostructures grown on InP(001)Project supported by the National Natural Science Foundation of China (Grant No. 69736010). | 
| Тип | paper | 
| DOI | 10.1088/1009-1963/9/3/012 | 
| Electronic ISSN | 1741-4199 | 
| Print ISSN | 1009-1963 | 
| Журнал | Chinese Physics | 
| Том | 9 | 
| Первая страница | 222 | 
| Последняя страница | 224 | 
| Аффилиация | Li Yue-fa; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Liu Feng-qi; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Xu Bo; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Lin Feng; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Wu Jü; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Jiang Wei-hong; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Ding Ding; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Аффилиация | Wang Zhan-guo; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China | 
| Выпуск | 3 | 
 
 
 
