Stark shift and self-energy correction in a non-centrosymmetric semiconductor have been studied by using the time-dependent perturbation technique and considering the diagonal elements of the transition dipole moment operator to be finite. The Stark shift obtainable from the Rabi frequency shows a time dependence. The analysis is applied to a sample of InSb duly irradiated by a near-resonant laser and it is found that the magnitude of Stark shift decreases while the magnitude of self-energy correction increases due to the incorporation of non-centrosymmetry.