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Автор C Z Ning
Автор J V Moloney
Автор A Egan
Автор R A Indik
Дата выпуска 1997-10-01
dc.description We present a semiconductor laser model which incorporates the gain bandwidth and nonlinear gain by using the multi-band microscopic theory of an electron - hole plasma in a semiconductor quantum-well medium. The approach is extremely robust, allowing us to take into account important many-body effects, as well as material and structural parameters of a given laser device. As a specific illustrative example, we resolve for the first time, the full multi-longitudinal mode and transverse filamentation instabilities of a master-oscillator power amplifier (MOPA) device.
Формат application.pdf
Издатель Institute of Physics Publishing
Название A first-principles fully space - time resolved model of a semiconductor laser
Тип paper
DOI 10.1088/1355-5111/9/5/004
Electronic ISSN 1361-6625
Print ISSN 1355-5111
Журнал Quantum and Semiclassical Optics: Journal of the European Optical Society Part B
Том 9
Первая страница 681
Последняя страница 691
Аффилиация C Z Ning; Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721, USA
Аффилиация J V Moloney; Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721, USA
Аффилиация A Egan; Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721, USA
Аффилиация R A Indik; Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721, USA
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