| Автор | J A Del Cueto |
| Автор | N J Shevchik |
| Дата выпуска | 1978-10-28 |
| dc.description | Extended X-ray absorption fine structure (EXAFS) experiments indicate that the nearest-neighbour distribution centred about the As atom of amorphous GaAs peaks at a distance of 0.04 AA greater than that of the crystalline form, while the nearest-neighbour distribution centred about Ga is the same as that of the crystal to within 0.015 AA. The differences in the two spacings indicates that the chemical disorder must be present in amorphous GaAs. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | EXAFS of amorphous GaAs: evidence for inequivalent environments of Ga and As |
| Тип | lett |
| DOI | 10.1088/0022-3719/11/20/002 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 11 |
| Первая страница | L829 |
| Последняя страница | L832 |
| Аффилиация | J A Del Cueto; Phys. Dept., State Univ. of New York, Stony Brook, NY, USA |
| Аффилиация | N J Shevchik; Phys. Dept., State Univ. of New York, Stony Brook, NY, USA |
| Выпуск | 20 |
