| Автор | E Antoncik |
| Автор | N K S Gaur |
| Дата выпуска | 1978-02-28 |
| dc.description | The spectrum dependence of the quantum efficiency of the internal photoelectric effect in silicon and germanium as recently measured by Christensen (see J. Appl. Phys., vol.47, p.689 (1976)) is interpreted in terms of the primary absorption process and the secondary relaxation processes. In particular, the interband Auger effect and emission of phonons directly connected with the generation of additional electron-hole pairs are discussed in detail. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Theory of the quantum efficiency in silicon and germanium |
| Тип | paper |
| DOI | 10.1088/0022-3719/11/4/017 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 11 |
| Первая страница | 735 |
| Последняя страница | 744 |
| Аффилиация | E Antoncik; Inst. of Phys., Univ. of Aarhus, Arhus, Denmark |
| Аффилиация | N K S Gaur; Inst. of Phys., Univ. of Aarhus, Arhus, Denmark |
| Выпуск | 4 |
