| Автор | P C Mathur |
| Автор | B R Sethi |
| Автор | O P Sharma |
| Автор | P L Talwar |
| Дата выпуска | 1979-06-28 |
| dc.description | The effect of high-temperature annealing in cadmium on the electrical transport properties of n-CdS single crystals has been investigated. It has been found that the mobility values which were measured experimentally were lower than those calculated theoretically using a method based on the Brooks-Herring formula. The discrepancy has been mainly explained by applying the electron-electron scattering correction to the ionised-impurity scattering. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Effect of high-temperature annealing in cadmium on the electrical transport properties of single crystals of cadmium sulphide |
| Тип | paper |
| DOI | 10.1088/0022-3719/12/12/019 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 12 |
| Первая страница | 2333 |
| Последняя страница | 2339 |
| Аффилиация | P C Mathur; Dept. of Phys. & Astrophys., Univ. of Delhi, Delhi, India |
| Аффилиация | B R Sethi; Dept. of Phys. & Astrophys., Univ. of Delhi, Delhi, India |
| Аффилиация | O P Sharma; Dept. of Phys. & Astrophys., Univ. of Delhi, Delhi, India |
| Аффилиация | P L Talwar; Dept. of Phys. & Astrophys., Univ. of Delhi, Delhi, India |
| Выпуск | 12 |
