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Автор Z T Kuznicki
Автор K Maschke
Автор Ph Schmid
Дата выпуска 1979-09-28
dc.description The anisotropy of the photocurrent as a function of photon energy has been measured in the range of the fundamental gap of GaSe. A high, temperature-sensitive, anisotropy of the photocurrent is observed for light energies slightly higher than the gap. The results give independent evidence for the disorder-induced localisation of the electronic states along the crystallographic c axis and confirm the interpretation of the DC and drift conductivity properties of this material.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Influence of stacking disorder on the photoconductivity of GaSe
Тип paper
DOI 10.1088/0022-3719/12/18/019
Print ISSN 0022-3719
Журнал Journal of Physics C: Solid State Physics
Том 12
Первая страница 3749
Последняя страница 3755
Аффилиация Z T Kuznicki; Lab. de Phys. Appl., Ecole Polytech. Federale, Lausanne, Switzerland
Аффилиация K Maschke; Lab. de Phys. Appl., Ecole Polytech. Federale, Lausanne, Switzerland
Аффилиация Ph Schmid; Lab. de Phys. Appl., Ecole Polytech. Federale, Lausanne, Switzerland
Выпуск 18

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