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Автор D Verity
Автор J E Nicholls
Автор J J Davies
Автор F J Bryant
Дата выпуска 1980-11-30
dc.description In ion-implanted ZnSe the g value of the donor resonance is found to shift from the value observed in unimplanted material and this shift is accompanied by a broadening of the resonance line, which in some cases is asymmetric. The behaviour is explained in terms of the mixing of the donor wavefunction with that of defect centres lying within the donor volume. The model allows an estimate to be made of the defect concentration within the implanted layer.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Optically detected donor electron g shifts in ion-implanted ZnSe
Тип lett
DOI 10.1088/0022-3719/13/33/007
Print ISSN 0022-3719
Журнал Journal of Physics C: Solid State Physics
Том 13
Первая страница L999
Последняя страница L1004
Аффилиация D Verity; Dept. of Phys., Univ. of Hull, Hull, UK
Аффилиация J E Nicholls; Dept. of Phys., Univ. of Hull, Hull, UK
Аффилиация J J Davies; Dept. of Phys., Univ. of Hull, Hull, UK
Аффилиация F J Bryant; Dept. of Phys., Univ. of Hull, Hull, UK
Выпуск 33

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