| Автор | J T Wimmers |
| Автор | J E Christopher |
| Дата выпуска | 1981-02-28 |
| dc.description | Schottky barrier tunnel junctions were prepared by cleaving degenerately doped silicon in a stream of evaporating indium. For heavily doped samples the bias dependence of the incremental resistance at helium temperatures showed agreement with many features of the theoretical predictions for a free electron model. For these samples striations, regular doping density variations reportedly present in all silicon crystals, played a minimal role. For lowly doped samples disagreement between theory and experiment was observed. The inapplicability to lowly doped silicon of the simple theory and the effect of striations are both interpreted to contribute to the deviations. Striations are essential for understanding the radiation compensations results; behaviour in a single junction appropriate to a parallel combination of junctions with different doping density was observed. For strongly compensated material the zero-bias conductance exhibited an exp(-C/T<sup>1</sup>4/) behaviour characteristic of tunnelling via localised states. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Tunnelling in metal-silicon Schottky barriers and effects of radiation compensation |
| Тип | paper |
| DOI | 10.1088/0022-3719/14/6/021 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 14 |
| Первая страница | 977 |
| Последняя страница | 992 |
| Аффилиация | J T Wimmers; Dept. of Phys. Astron., Univ. of Kentucky, Lexington, KY, USA |
| Аффилиация | J E Christopher; Dept. of Phys. Astron., Univ. of Kentucky, Lexington, KY, USA |
| Выпуск | 6 |
