Pressure-induced elastic softening of SmS
G A Saunders; W A Lambson; Tu Hailing; D W Bullett; H Bach; S Methfessel; G A Saunders; School of Phys., Univ. of Bath, Bath, UK; W A Lambson; School of Phys., Univ. of Bath, Bath, UK; Tu Hailing; School of Phys., Univ. of Bath, Bath, UK; D W Bullett; School of Phys., Univ. of Bath, Bath, UK; H Bach; School of Phys., Univ. of Bath, Bath, UK; S Methfessel; School of Phys., Univ. of Bath, Bath, UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1982-06-20
Аннотация:
Elastic constant measurements under hydrostatic pressure show that, as semiconducting SmS approaches its type O isostructural transition from the larger-volume side, the bulk modulus decreases but not in the catastrophic manner characteristic of the intermediate-valence Sm<sub>1-x</sub>Y<sub>x</sub>S alloys near the transition. In both the semiconducting SmS and the intermediate-valence metallic-state Sm<sub>1-x</sub>Y<sub>x</sub>S alloys the contribution from cubic terms to the elastic strain energy is small.
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