| Автор | B B Touami |
| Автор | D V Osborne |
| Дата выпуска | 1982-11-30 |
| dc.description | Phonon scattering in phosphorus-doped silicon has been studied using a heat-pulse technique in which backscattering is measured. With crystal sizes of the order of 10 mm and with phosphorus concentrations up to 1.8*10<sup>16</sup> cm<sup>-3</sup>, it has been shown that single-phonon scattering is predominant. A theoretical curve has been fitted to measurements of backscattered pulse amplitude as a function of input pulse power, and from this fit the authors have been able to deduce the constant A for isotopic Rayleigh scattering in pure silicon (A=0.43 s<sup>-1</sup> K<sup>-4</sup>), the deformation potential E<sub>u</sub> associated with the bottom of the conduction band (E<sub>u</sub>=8.6 eV), and the Bohr radius r<sub>0</sub> of the phosphorus impurity (r<sub>0</sub>=16 AA). These results are in agreement with those derived by other workers from thermal conductivity measurements. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Phonon scattering in phosphorus-doped silicon |
| Тип | paper |
| DOI | 10.1088/0022-3719/15/33/010 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 15 |
| Первая страница | 6719 |
| Последняя страница | 6729 |
| Аффилиация | B B Touami; School of Math. & Phys., Univ. of East Anglia, Norwich, UK |
| Аффилиация | D V Osborne; School of Math. & Phys., Univ. of East Anglia, Norwich, UK |
| Выпуск | 33 |
