Two-dimensional magnetophonon resonance. II. GaInAs-AlInAs heterojunctions
M A Brummell; R J Nicholas; J C Portal; K Y Cheng; A Y Cho; M A Brummell; Clarendon Lab., Oxford Univ., Oxford, UK; R J Nicholas; Clarendon Lab., Oxford Univ., Oxford, UK; J C Portal; Clarendon Lab., Oxford Univ., Oxford, UK; K Y Cheng; Clarendon Lab., Oxford Univ., Oxford, UK; A Y Cho; Clarendon Lab., Oxford Univ., Oxford, UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1983-06-20
Аннотация:
For pt.I see ibid., vol.16, p.L573 (1983). Reports magnetophonon oscillations in the two-dimensional electron gas formed in GaInAs at GaInAs-AlInAs heterojunctions. One series of oscillations is seen, corresponding to the energy of the degenerate 'InAs-like' LO phonon modes in GaInAs and AlInAs. There is also an interface phonon mode at the same energy. In bulk GaAInAs scattering is dominated by the 'GaAs-like' mode, and so as long-range phonon interaction between the electrons in the GaInAs and the interface and/or AlInAs 'InAs-like modes must be invoked to explain the dominance of scattering by these modes. Comparing the results with those for GaInAs-InP superlattices, it can be seen that changing the electrically inactive component of the heterostructure produces a radical change in the electron-phonon interactions.
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