Surface core-level shifts of 4d states of (110) cleaved InSb
M Taniguchi; S Suga; M Seki; S Shin; K L I Kobayashi; H Kanzaki; M Taniguchi; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan; S Suga; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan; M Seki; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan; S Shin; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan; K L I Kobayashi; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan; H Kanzaki; Inst. for Solid State Phys., Univ. of Tokyo, Tokyo, Japan
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1983-01-20
Аннотация:
4d core levels of InSb(110) cleaved surface have been measured by ultraviolet photoemission spectroscopy with the aid of synchrotron radiation. The authors have recently observed surface core levels of In shifted to larger binding energies by +0.22 eV and those of Sb shifted to smaller binding energies by -0.29 eV, relative to their bulk components. The location of the cation-derived empty surface state is re-evaluated to be at 0.33 eV above the valence band maximum.
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