Indirect exchange interaction in semiconductors
V -C Lee; L Liu; V -C Lee; Dept. of Electronics Engng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan; L Liu; Dept. of Electronics Engng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1983-10-30
Аннотация:
In considering the indirect exchange interaction between magnetic ions in a semiconductor with interacting bands, the authors show that there exist two competing components. For a pair of interacting bands, the interband excitations give rise to a ferromagnetic interaction, and for non-interacting bands the contribution is antiferromagnetic. They illustrate this with two examples, one involving interacting s-p and the other p-d bands.
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