Pressure dependence of the metal-insulator transitions in (TMTTF)<sub>2</sub>SCN
S S P Parkin; C Coulon; D Jerome; S S P Parkin; Lab. de Phys. des Solides, Univ. Paris-Sud, Orsay, France; C Coulon; Lab. de Phys. des Solides, Univ. Paris-Sud, Orsay, France; D Jerome; Lab. de Phys. des Solides, Univ. Paris-Sud, Orsay, France
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1983-03-10
Аннотация:
The pressure-temperature phase diagram (for pressures up to 23 kbar) of bis-tetramethyltetrathiofulvalene thiocyanide, (TMTTF)<sub>2</sub>SCN, has been determined through needle axis resistivity measurements. The authors find two distinct metal-insulator (MI) transitions. At low pressures there is an MT transition at high temperature T<sub>I</sub>(P) (near 160K at 1 bar); T<sub>I</sub> falls with increasing pressure (dT<sub>I</sub>/dP approximately -2K kbar<sup>-1</sup>) and is abruptly suppressed for pressures above 15 kbar where a low-temperature (T<sub>II</sub> approximately 15K) MI transition is stabilised. In a narrow pressure domain just below 15 kbar pronounced hysteretic behaviour is observed near T<sub>I</sub> and effects associated with both of these MI transitions are seen. By comparison with the behaviour of other members of the isostructural families (TMTTF)<sub>2</sub>X and (TMTSeF)<sub>2</sub>X they associate T<sub>I</sub> with an anion-disorder transition and T<sub>II</sub> with a lattice distortion or spin density wave instability on the TMTTF stack. These results confirm a strong correspondence between the properties of the (TMTTF)<sub>2</sub>X and (TMTSeF)<sub>2</sub>X families, in particular with respect to the behaviour of those materials containing non-centrosymmetric anions.
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