| Автор | R M O Galvao |
| Автор | L C M Miranda |
| Дата выпуска | 1984-01-20 |
| dc.description | The influence of a laser field on the scattering rate for the electron-phonon interaction in semiconductor layered heterojunction structures is discussed. It is found that for a laser beam polarised in the layer plane and with a frequency omega such that omega tau >1, where tau is the carrier relaxation time, the phonon-limited mobility increases with increasing laser field strength. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Laser-enhanced mobility in semiconducting layered structures |
| Тип | lett |
| DOI | 10.1088/0022-3719/17/2/002 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 17 |
| Первая страница | L41 |
| Последняя страница | L45 |
| Аффилиация | R M O Galvao; Inst. de Estudo Avancados, Centro Tecnico Aerospacial, Sao Jose dos Campos, Brazil |
| Аффилиация | L C M Miranda; Inst. de Estudo Avancados, Centro Tecnico Aerospacial, Sao Jose dos Campos, Brazil |
| Выпуск | 2 |
