| Автор | R Passler |
| Дата выпуска | 1984-11-30 |
| dc.description | For any lattice temperature T<or approximately=10<sup>3</sup>K and different charge states Z of the centre the authors describe the dependences of non-radiative multiphonon carrier capture coefficients C<sup>Z</sup>(T; E) on the carrier energy E by products of the familiar Sommerfeld factors s<sup>Z</sup>(E) with corresponding energy-loss factors C<sup>0</sup>(T; E). As the carrier energy E is increased these 'neutral parts' C<sup>0</sup>(T; E) of capture coefficients decrease or increase (exponentially) in the alternative regimes of small and large lattice relaxation. Their maximum enhancements C<sub>max</sub><sup>0</sup>/C<sup>0</sup>(0;0), which can be produced in the latter regime, at low lattice temperatures, are shown to be approximately exp(S(1+ gamma ln gamma - gamma )) (approaching e<sup>S</sup> in the gamma to 0 limit) where S represents the Huang-Rhys factor and gamma the ratio between thermal depth and lattice relaxation energy. For values of S of the order of 10 this 'enhanced hot-carrier capture due to large lattice relaxation' effect can thus amount to several orders of magnitude and should hence be of considerable importance for interpretations of corresponding hot-carrier capture data. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Hot-carrier effects in non-radiative multiphonon capture by deep traps in semiconductors |
| Тип | paper |
| DOI | 10.1088/0022-3719/17/33/008 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 17 |
| Первая страница | 5957 |
| Последняя страница | 5974 |
| Аффилиация | R Passler; Tech. Hochschule Karl-Marx-Stadt, East Germany |
| Выпуск | 33 |
