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Автор M Hammam
Автор G J Adriaenssens
Автор W Grevendonk
Дата выпуска 1985-04-10
dc.description The steady-state photoconductivity has been measured and analysed for vitreous a-As<sub>2</sub>Se<sub>3</sub> and evaporated a-As<sub>2</sub>Se<sub>3</sub> films, and for non-stoichiometric vitreous As-Se alloys. Special attention was paid to the dependence on illumination energy and intensity, and to the temperature dependence of the photocurrent. The spectral distribution of the photo-current provides evidence for a defect level about 1.4 to 1.5 eV into the gap for all bulk samples, irrespective of composition. The temperature dependence can at the same time, and again for bulk samples, be comprehensively analysed in terms of a two-defect-level energy diagrams, which is compatible with the optical 1.4 eV level. For evaporated layers, on the other hand, no spectroscopic feature could be resolved, nor could a self-consistent result be obtained for the temperature dependence analysis in terms of discrete gap levels.
Формат application.pdf
Издатель Institute of Physics Publishing
Название Steady-state photoconductivity in amorphous arsenic selenide compounds
Тип paper
DOI 10.1088/0022-3719/18/10/020
Print ISSN 0022-3719
Журнал Journal of Physics C: Solid State Physics
Том 18
Первая страница 2151
Последняя страница 2160
Аффилиация M Hammam; Lab. voor Vaste Stof-en Hoge Drukfysika, Katholieke Univ., Belgium
Аффилиация G J Adriaenssens; Lab. voor Vaste Stof-en Hoge Drukfysika, Katholieke Univ., Belgium
Аффилиация W Grevendonk; Lab. voor Vaste Stof-en Hoge Drukfysika, Katholieke Univ., Belgium
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