Anti-site centres in e-irradiated InP:Zn
A Kana-ah; M Deiri; B C Cavenett; N D Wilsey; T A Kennedy; A Kana-ah; Dept. of Phys., Hull Univ., UK; M Deiri; Dept. of Phys., Hull Univ., UK; B C Cavenett; Dept. of Phys., Hull Univ., UK; N D Wilsey; Dept. of Phys., Hull Univ., UK; T A Kennedy; Dept. of Phys., Hull Univ., UK
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1985-07-20
Аннотация:
The influence dependence of P<sub>In</sub> anti-site centres in electron-irradiated InP:Zn has been investigated by MCD-ODMR, where the extra sensitivity of the method has revealed a threshold at 3*10<sup>16</sup> cm<sup>-2</sup> and a saturation of the concentration at 6*10<sup>16</sup> cm<sup>-3</sup>. Anti-site resonances with small differences in parameters are observed for InP:Sn and InP:Zn.
296.3Кб