The indirect hyperfine interaction of a <sup>29</sup>Si nearest neighbour to an oxygen defect in SiO<sub>2</sub>
A N Jette; F J Adrian; A N Jette; Milton S Eisenhower Res. Center, Johns Hopkins Univ., Laurel, MD, USA; F J Adrian; Milton S Eisenhower Res. Center, Johns Hopkins Univ., Laurel, MD, USA
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1986-05-30
Аннотация:
A recent calculation determined the indirect aluminium hyperfine interactions for a number of oxygen-aluminium trapped-hole centres (Al<sup>3+</sup>-O<sup>-</sup>) in ionic crystals. One of these crystals was SiO<sub>2</sub> where Al<sup>3+</sup> is incorporated as an impurity. The theory showed that the dominant mechanism of the Al<sup>3+</sup> transferred hyperfine interactions is exchanged polarisation. Since experimental data also exist for the Si<sup>4+</sup> magnetic nuclei that are nearest neighbours to the Al<sup>3+</sup>-O<sup>-</sup> centre in SiO<sub>2</sub>, it is of interest to see if this same theory can account for the Si<sup>4+</sup> transferred hyperfine interactions. This Letter reports on the results of calculating the Si<sup>4+</sup> transferred hyperfine interactions for this system. The model has much the same level of success for the Si hyperfine interactions as for the Al.
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