Dynamical suppression of weak localisation in silicon polycrystalline films by microwave radiation
A A Bykov; G M Gusev; Z D Kvon; A A Bykov; Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, USSR; G M Gusev; Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, USSR; Z D Kvon; Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, USSR
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1988-06-10
Аннотация:
The influence of microwave radiation with frequency ranging from 0.3 to 12 GHz on the quantum corrections to the conductivity in polycrystalline silicon films is studied. The heating effect and the dynamical suppression of these corrections are separated. The dynamical destruction of the weak localisation is described theoretically with parameters deduced from the negative magnetoresistance measurements.
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