| Автор | A G Briggs |
| Автор | L J Challis |
| Автор | F W Sheard |
| Дата выпуска | 1970-03-01 |
| dc.description | Measurements have been made of the thermal conductivity of GaSb-InSb alloys at 300 K and over the whole range of concentration. The data are generally in good agreement with those of Woolley and Briggs and Kudman, Ekstrom and Seidel (1964, 1967). It is shown that an approximate fit to the data can be obtained on a Debye model, although it is not possible to conclude whether longitudinal or transverse modes dominate, and it is suggested this is also the case for all previous work on semiconductor alloys. The additional thermal resistance in the alloys is approximately proportional to the reciprocal relaxation time for defect scattering up to much higher defect concentrations than would be the case for a Debye model. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | The thermal conductivity of GaSb-InSb alloys at 300 K |
| Тип | paper |
| DOI | 10.1088/0022-3719/3/3/024 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 3 |
| Первая страница | 687 |
| Последняя страница | 695 |
| Аффилиация | A G Briggs; Univ. Nottingham, UK |
| Аффилиация | L J Challis; Univ. Nottingham, UK |
| Аффилиация | F W Sheard; Univ. Nottingham, UK |
| Выпуск | 3 |
