| Автор | H A Hillbrand |
| Дата выпуска | 1972-12-12 |
| dc.description | A modified Monte Carlo method is used to study the dynamical behaviour of electron transfer in GaAs and InP. The frequency dependence of several transport quantities and of the DC-AC conversion efficiency is calculated assuming a square wave form of the applied electric field. From a detailed study of the frequency behaviour it must be concluded that in general the relaxation of the electron transfer mechanism is not only due to heating effects in the central Gamma valley as previously shown for GaAs but also due to intervalley scattering times if the latter are sufficiently large. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | High frequency behaviour of electron transfer in InP and GaAs from a dynamical Monte Carlo study |
| Тип | paper |
| DOI | 10.1088/0022-3719/5/24/012 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 5 |
| Первая страница | 3491 |
| Последняя страница | 3503 |
| Аффилиация | H A Hillbrand; Tech. Hochschule, Wien, Austria |
| Выпуск | 24 |
