| Автор | M K R Vyas |
| Автор | G D Pitt |
| Автор | R A Hoult |
| Дата выпуска | 1973-01-31 |
| dc.description | Hall measurements to 120 K at 50 kbar have been carried out for electrons in the )100), X<sub>1c</sub>, satellite valleys in epitaxial and bulk grown GaAs for carrier concentrations in the range 10<sup>14</sup>-10<sup>18</sup> cm<sup>-3</sup>. Two distinct impurity levels have been found to be associated with the X<sub>1c</sub> minima; estimates of activation energies 0.145+or-0.02 eV and 0.066+or-0.01 eV have been obtained for carrier concentrations near 10<sup>15</sup> cm<sup>-3</sup>. The activation energies of these levels decreased with increasing carrier concentration. Theoretical analysis of mobility-temperature curves has shown intervalley scattering to be dominant for purer samples while for the heavily doped bulk grown samples space-charge scattering becomes more important. A best estimate of the (X<sub>1c</sub>-X<sub>1c</sub>) deformation potential field, D<sub>xx</sub>, of 0.8*10<sup>9</sup> eV cm<sup>-1</sup> for a deformation potential E<sub>1</sub> of 5.0 eV has been obtained. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Low temperature Hall measurements on the X<sub>1c</sub> electrons in GaAs |
| Тип | paper |
| DOI | 10.1088/0022-3719/6/2/010 |
| Print ISSN | 0022-3719 |
| Журнал | Journal of Physics C: Solid State Physics |
| Том | 6 |
| Первая страница | 285 |
| Последняя страница | 299 |
| Аффилиация | M K R Vyas; Standard Telecommunication Labs. Ltd., Harlow, Essex, UK |
| Аффилиация | G D Pitt; Standard Telecommunication Labs. Ltd., Harlow, Essex, UK |
| Аффилиация | R A Hoult; Standard Telecommunication Labs. Ltd., Harlow, Essex, UK |
| Выпуск | 2 |
