Pressure-induced phase transitions in InBi
E Rapoport; G D Pitt; G A Saunders; E Rapoport; Soreq Nuclear Res. Centre, Yavne, Israel; G D Pitt; Soreq Nuclear Res. Centre, Yavne, Israel; G A Saunders; Soreq Nuclear Res. Centre, Yavne, Israel
Журнал:
Journal of Physics C: Solid State Physics
Дата:
1975-11-07
Аннотация:
The electrical resistivity of single-crystal InBi has been measured in a hydrostatic pressure cell to 15 kbar and in a Bridgman anvil apparatus to 90 kbar. The resistivity decreases linearly with pressure to 19 kbar, where an abrupt jump indicates a first-order crystallographic transition. A distinct change in slope occurs at 40-45 kbar and is possibly due to a second-order displacive transition.
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