Thermoelectric and mean free path effects in thin metal films
G W Wilson; G W Wilson; Department of Physics and Physical Electronics, Rutherford College of Technology, Ellison Place, Newcastle upon Tyne
Журнал:
Journal of Physics D: Applied Physics
Дата:
1968-12-01
Аннотация:
Measurements of the thermoelectric power and thickness of metal films can be used to calculate the mean free path of the conduction electrons without assumption of the bulk resistivity of the metal used in producing the films. The dependence of this mean free path on electron energy can also be found.
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