| Автор | K G Svantesson |
| Дата выпуска | 1979-03-14 |
| dc.description | Describes and experimental method together with an analysis of the experimental data, which makes it possible to determine the interband absorption coefficient, the free carrier absorption cross-section and the surface reflectivity in the same experimental set-up. The experiments were performed on samples of pure silicon at T=294K using a pulsed Nd-YAG laser, which gave pulses of 10-15 ns duration at lambda =1.06 mu m. The maximum carrier concentration achieved was about 3*10<sup>19</sup> cm<sup>-3</sup>. Effects of laser beam inhomogeneities are also discussed and included in the absorption model. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | Determination of the interband and the free carrier absorption constants in silicon at high-level photoinjection |
| Тип | paper |
| DOI | 10.1088/0022-3727/12/3/012 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 12 |
| Первая страница | 425 |
| Последняя страница | 436 |
| Аффилиация | K G Svantesson; Phys. Dept., Royal Inst. of Technol., Stockholm, Sweden |
| Выпуск | 3 |
