| Автор | H L Kwok |
| Автор | K H Ho |
| Дата выпуска | 1982-11-14 |
| dc.description | Considered the transport properties of p-type polysilicon using a three-dimensional spherical model and compared the results with experimental data and a one-dimensional model commonly used. It was observed that the main differences between the two models exist after the crystal grains are totally depleted. This happens to be a region where reliable data (especially for carrier density) are scarce. From the theoretical analyses, the three-dimensional model seemed to be as good as the one-dimensional model in the high doping regime and for the resistivity data. Some significant differences existed between theory and experiment for the activation energies based on either of the two models and it is suspected that gross inhomogeneity could be the cause. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A three-dimensional model for the transport properties of polycrystalline silicon |
| Тип | paper |
| DOI | 10.1088/0022-3727/15/11/019 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 15 |
| Первая страница | 2271 |
| Последняя страница | 2281 |
| Аффилиация | H L Kwok; Dept. of Electronics, Chinese Univ. of Hong Kong, Shatin, Hong Kong |
| Аффилиация | K H Ho; Dept. of Electronics, Chinese Univ. of Hong Kong, Shatin, Hong Kong |
| Выпуск | 11 |
