| Автор | K B Sundaram |
| Автор | G K Bhagavat |
| Дата выпуска | 1983-01-14 |
| dc.description | Transparent conducting tin oxide films were prepared by a chemical vapour deposition technique. The films were deposited at substrate temperatures of 400, 450 and 500 degrees C. The films were annealed (above the deposition temperatures) up to 1000 degrees C in various gas atmospheres (argon, oxygen, nitrogen and air). It is observed that there is an initial decrease in resistivity up to a temperature of 700 degrees C which is followed by an increase in resistivity beyond 700 degrees C. X-ray and electron diffraction studies have been carried out on the annealed films and the behaviour of this decrease and increase in resistivity has been explained. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | High-temperature annealing effects on tin oxide films |
| Тип | paper |
| DOI | 10.1088/0022-3727/16/1/011 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 16 |
| Первая страница | 69 |
| Последняя страница | 76 |
| Аффилиация | K B Sundaram; Dept. of Electrical Engng., Indian Inst. of Technol., Bombay, India |
| Аффилиация | G K Bhagavat; Dept. of Electrical Engng., Indian Inst. of Technol., Bombay, India |
| Выпуск | 1 |
