| Автор | F Fransen |
| Автор | M J Madou |
| Автор | W H Laflere |
| Автор | F Cardon |
| Автор | W P Gomes |
| Дата выпуска | 1983-05-14 |
| dc.description | Dielectric properties of several semiconducting materials were studied by impedance measurements of metal/semiconductor and electrolyte/semiconductor Schottky barriers. Power laws of the frequency were observed analogous to those reported for insulating materials. Also the relationship between the tangent of the loss angle and the bandgap of the semiconductor appeared to be similar to that observed on insulators. The results indicate that the residual frequency dispersion of the Schottky-barrier capacitance, persisting after careful pretreatment of the semiconductor surface, can be ascribed to the dielectric properties of the space-charge layer. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers |
| Тип | paper |
| DOI | 10.1088/0022-3727/16/5/019 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 16 |
| Первая страница | 879 |
| Последняя страница | 888 |
| Аффилиация | F Fransen; Rijksuniv. Gent, Gent, Belgium |
| Аффилиация | M J Madou; Rijksuniv. Gent, Gent, Belgium |
| Аффилиация | W H Laflere; Rijksuniv. Gent, Gent, Belgium |
| Аффилиация | F Cardon; Rijksuniv. Gent, Gent, Belgium |
| Аффилиация | W P Gomes; Rijksuniv. Gent, Gent, Belgium |
| Выпуск | 5 |
