| Автор | S G Ingle |
| Автор | S C Joshi |
| Дата выпуска | 1984-10-14 |
| dc.description | A dislocation model is proposed to explain the nucleation of domain walls under the influence of steady electric fields. The critical length of the nucleated domain wall along the surface, and the critical energy for nucleation can be calculated. It is found that the critical energy of nucleation varies inversely as (E-E<sub>cr</sub>), where E is the applied electric field and E<sub>cr</sub>, the critical field for nucleation which was earlier found to be approximately 8*10<sup>3</sup>V m<sup>-1</sup> for KNbO<sub>3</sub> single crystals. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | A dislocation model for nucleation of domain walls in KNbO<sub>3</sub> single crystals |
| Тип | paper |
| DOI | 10.1088/0022-3727/17/10/017 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 17 |
| Первая страница | 2065 |
| Последняя страница | 2067 |
| Аффилиация | S G Ingle; Laxminarayan Inst. of Technol., Nagpur Univ., India |
| Аффилиация | S C Joshi; Laxminarayan Inst. of Technol., Nagpur Univ., India |
| Выпуск | 10 |
