| Автор | J P J McCann |
| Автор | M R Brozel |
| Автор | L Eaves |
| Дата выпуска | 1984-09-14 |
| dc.description | It is generally accepted that Cr-doped LEC GaAs has a higher resistivity than undoped semiinsulating material grown by the same technique. The principal aim of these measurements is to establish the compensation mechanism in LEC GaAs when both Cr and the native deep donor level EL2 are present. Using EPR mapping, the authors have measured the spatial distribution of the Cr<sup>2+</sup> charge state in material which is known to be uniformly doped with Cr. The distribution of (Cr<sup>2+</sup>) is found to follow that of EL2 in undoped samples. It is concluded that for GaAs heavily doped with Cr the Fermi level is pinned at the Cr<sup>2+</sup>/Cr<sup>3+</sup> acceptor level and that this level lies lower in the forbidden gap than the EL2<sup>0</sup>/EL2<sup>+</sup> donor level. The model is shown to explain the electrical characteristics of undoped and Cr-doped LEC GaAs ingots. |
| Формат | application.pdf |
| Издатель | Institute of Physics Publishing |
| Название | An investigation of the distribution of Cr and EL2 in semiinsulating GaAs grown by the LEC method |
| Тип | paper |
| DOI | 10.1088/0022-3727/17/9/010 |
| Electronic ISSN | 1361-6463 |
| Print ISSN | 0022-3727 |
| Журнал | Journal of Physics D: Applied Physics |
| Том | 17 |
| Первая страница | 1851 |
| Последняя страница | 1858 |
| Аффилиация | J P J McCann; Dept. of Phys., Univ. of Nottingham, Nottingham, UK |
| Аффилиация | M R Brozel; Dept. of Phys., Univ. of Nottingham, Nottingham, UK |
| Аффилиация | L Eaves; Dept. of Phys., Univ. of Nottingham, Nottingham, UK |
| Выпуск | 9 |
